sot23 silicon planar high speed switching diode pair common cathode issue 2 ? january 1995 pin configuration partmarking detail bav70 ? a4 absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 70 v repetative reverse voltage v rrm 70 v average forward rectified current (over any 20ms period) i f(av) 100 ma repetative peak forward current i frm 200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. forward voltage v f 715 855 1.1 1.3 mv mv v v i f = 1ma i f = 10ma i f = 50ma i f = 100ma reverse current i r 60 5.0 100 m a m a m a v r =25v, tj = 150c v r = 70v v r = 70v, tj = 150c diode capacitance c d 1.5 pf f=1mhz forward recovery time v fr 1.75 v switched to i f = 10ma, t r = 20ns reverse recovery time t rr 6 ns switched from i f = 10ma to v r = 1v * for switching test circuit diagram, refer to bav99 datasheet spice parameter data is available upon request for this device bav70 1 3 2 sot23 1 3 2 bav70
sot23 high speed switching diode pair common cathode issue 2 ? january 1995 pin configuration partmarking details bav70 ? a4 absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 70 v repetative reverse voltage v rrm 70 v average forward rectified current (over any 20ms period) i f(av) 100 ma repetative peak forward current i frm 200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. forward voltage v f 715 855 1.1 1.3 mv mv v v i f = 1ma i f = 10ma i f = 50ma i f = 100ma reverse current i r 60 5.0 100 m a m a m a v r =25v, tj = 150c v r = 70v v r = 70v, tj = 150c diode capacitance c d 1.5 pf f=1mhz forward recovery time v fr 1.75 v switched to i f = 10ma, t r = 20ns reverse recovery time t rr 6 ns switched from i f = 10ma to v r = 1v * for switching test circuit diagram, refer to page ds 15. bav70 page no 1 3 2 sot23 zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161-627 5105 (sales), (44)161-627 4963 (general enquiries) facsimile: (44)161-627 5467 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 87 modular avenue 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny11725 hing fong road, kwai fong major countries world-wide telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 ? zetex plc 1995 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service. 1 3 2 bav70 dim millimeters inches min max min max a 2.67 3.05 0.105 0.120 b 1.20 1.40 0.047 0.055 c ? 1.10 ? 0.043 d 0.37 0.53 0.0145 0.021 f 0.085 0.15 0.0033 0.0059 g nom 1.9 nom 0.075 k 0.01 0.10 0.0004 0.004 l 2.10 2.50 0.0825 0.0985 n nom 0.95 nom 0.37 1 3 2
|
